IPB036N12N3 G
OptiMOS™3 Power-Transistor
Features Ideal for high frequency switching and DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to ...