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IPB036N12N3G

Infineon Technologies AG

Power-Transistor


Description
IPB036N12N3 G OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to ...



Infineon Technologies AG

IPB036N12N3G

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