IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product...
IPP041N12N3 G
OptiMOSTM3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO-263) ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant, halogen free Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
IPI041N12N3 G IPB038N12N3 G
120 V 3.8 mW 120 A
Type
IPB038N12N3 G IPI041N12N3 G
IPP041N12N3 G
Package Marking
PG-TO263-3 038N12N
PG-TO262-3 041N12N
PG-TO220-3 041N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 W
Gate source voltage 4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
120 120 480 900 ±20 300 -55 ... 175 55/175/56
Unit A
mJ V W °C
Rev. 2.3
page 1
2014-04-15
IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance,
R thJA minimal footprint
-
junction - ambient
6 cm2 cooling area5)
-
-
0.5 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source brea...
