IPB039N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product ...
IPB039N10N3 G
OptiMOS™3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) High current capability 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Type IPB039N10N3 G
Product Summary V DS R DS(on),max ID 100 3.9 160 V mΩ A
Package Marking
PG-TO263-7 039N10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature
www.DataSheet4U.com IEC climatic category; DIN IEC 68-1
1) 2)
Value 160 113 640 340 ±20
Unit A
I D,pulse E AS V GS P tot T j, T stg
T C=25 °C I D=100 A, R GS=25 Ω
mJ V W °C
T C=25 °C
214 -55 ... 175 55/175/56
J-STD20 and JESD22 See figure 3
Rev.2.03
page 1
2009-12-17
IPB039N10N3 G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) 0.7 62 40 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=160 µA V DS...
