EIA1111-6

EIA1111-6 UPDATED 12/06/2005 11.0-11.5 GHz 6-Watt Internally Matched Power FET .060 MIN. FEATURES 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package Excelics EIA1111-6 YM SN .094 .382 .060 MIN. .650±.008 .512 GATE DRAIN .319 .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 1600mA Gain Flatness f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 1600mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 36.5 9.0 TYP 37.5 10.0 MAX UNITS dBm dB ±0.6 35 1800 2800 -1.0 4.5 2100 3500 -2.5 5.0 o dB % mA mA V C/W f = 11.0-11.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 28 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUT...