EIA1114-2

EIA1114-2 UPDATED 07/25/2006 11.0-14.0GHz 2-Watt Internally Matched Power FET FEATURES 11.0– 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 dBc IM3 at Po = 22.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. Excelics EIA1114-2 YYWW SN .094 .382 .060 MIN. .650±.008 .512 GATE .319 DRAIN .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Gain at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Gain Flatness f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Power Added Efficiency at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Drain Current at 1dB Compression f = 11.0-14.0GHz Caution! ESD sensitive device. MIN 32.5 6.0 TYP 33.5 7.0 MAX UNITS dBm dB ±0.8 25 850 -36 1440 -1.0 11.0 1800 -2.5 12.0 o dB % 1000 mA dBc mA V C/W Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2 VDS = 8 V, IDSQ ≈ 65% IDSS f = 14.0GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 15 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM...