11.0-14.0 GHz 2-Watt Internally Matched Power FET
EIA1114-2
UPDATED 07/25/2006
11.0-14.0GHz 2-Watt Internally Matched Power FET
FEATURES
• • • • • • • • 11.0– 14.0GHz B...
Description
EIA1114-2
UPDATED 07/25/2006
11.0-14.0GHz 2-Watt Internally Matched Power FET
FEATURES
11.0– 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 dBc IM3 at Po = 22.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
.060 MIN.
Excelics
EIA1114-2
YYWW SN
.094 .382
.060 MIN.
.650±.008 .512
GATE
.319
DRAIN
.022
.045 .004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Gain at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Gain Flatness f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Power Added Efficiency at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Drain Current at 1dB Compression f = 11.0-14.0GHz
Caution! ESD sensitive device. MIN
32.5 6.0
TYP
33.5 7.0
MAX
UNITS
dBm dB
±0.8 25 850 -36 1440 -1.0 11.0 1800 -2.5 12.0
o
dB %
1000
mA dBc mA V C/W
Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2 VDS = 8 V, IDSQ ≈ 65% IDSS f = 14.0GHz
Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 15 mA
2) S.C.L. = Single Carrier Level.
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM...
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