EIA1314-8P

Excelics 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE(25% TYPICAL) +39dBm TYPICAL P1dB OUTPUT POWER 7.0dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE EIA1314-8P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 8W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314-8P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=13.75-14.5GHz MIN 38 6.0 TYP 39 7.0 25 3520 46 4400 5760 6000 -1.0 -13 -15 2.3 o MAX UNIT dBm dB % mA dBm P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth Power Added Efficiency at 1dB compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss rd f=13.75-14.5GHz Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=48mA 6800 mA mS -2.5 V V C/W Drain Breakdown Voltage Igd=19.2mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg www.DataSheet4U.com Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 720mA 38dBm 175oC -65/175oC 60W 8V -3V 6240mA 120mA @ 3dB Compression 150oC -65/150oC 50W CONTINUOUS2 Note: 1. Exceeding any of the a...