EIA1414-6

EIA1414-6 UPDATED 12/5/2005 14.00-14.50 GHz 6-Watt Internally Matched Power FET FEATURES 14.00– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package .060 MIN. Excelics EIA1414-6 YM SN .094 .382 .060 MIN. .650±.008 .512 GATE DRAIN .319 .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.00-14.50GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 14.00-14.50GHz VDS = 8 V, IDSQ ≈ 1600mA Gain Flatness f = 14.00-14.50GHz VDS = 8 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression f = 14.00-14.50GHz VDS = 8 V, IDSQ ≈ 1600mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 36.5 7.0 TYP 37.5 8.0 MAX UNITS dBm dB ±0.6 33 1800 2800 -1.0 4.5 2100 3500 -2.5 5.0 o dB % mA mA V C/W f = 14.00-14.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 28mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOLS 1,2 PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Diss...