EIA1415A-4P

Excelics 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE( 25% TYPICAL) +36.0dBm TYPICAL P1dB OUTPUT POWER 7/6dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE EIA1415A-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-15.35GHz, 4W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1415-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Power Added Efficiency at 1dB compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=24mA -13 2200 rd MIN 35.0 6 TYP 36.0 7 25 1800 43 2880 3000 -1.0 -15 4.5 MAX UNIT dBm dB P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth % mA dBm 3400 mA mS -2.5 V V o Drain Breakdown Voltage Igd=9.6mA Thermal Resistance (Au-Sn Eutectic Attach) C/W MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 360mA 35dBm 175oC -65/175oC 30W 8V -3V 3120mA 60mA @ 3dB Compression 150oC -65/150oC 25W CONTINUOUS2 www.DataSheet4U.com Note: 1. Exceeding any of the ...