17.3-18.7GHz 1W Internally Matched Power FET
Excelics
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EIA/EIB1718A-1P
17.3-18.1GHz, 1W Internally Matched Power FET
PRELIMINARY DATA SHEET
17.3-18.1GH...
Description
Excelics
EIA/EIB1718A-1P
17.3-18.1GHz, 1W Internally Matched Power FET
PRELIMINARY DATA SHEET
17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.5/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 7.5/6.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1718A-1P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=6mA -13 550
rd
EIB1718A-1P MIN 29.0 5.5 TYP 29.5 6.0 MAX UNIT dBm dB
MIN 29 6.5
TYP 30.5 7.5
MAX
P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd
30 440 37 720 760 -1.0 -15 16 -2.5 850 550
25 425 43* 720 360 -2.0 -15 16
o
% mA dBm 850 mA mS -3.5 V V C/W
Drain Breakdown Voltage Igd=2.4mA
Thermal Resistance (Au-Sn Eutectic Attach) Rth *Typical –45dBc IM3 at Pout=20dBm/Tone
MAXIMUM RATINGS AT 25OC
SYMBOLS Vds Vgs Ids Igsf Pin PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temper...
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