EIA5060-1S

Excelics TENTATIVE DATA SHEET EIA5060-1S 5.0-6.0GHz, 1W Internally Matched Power FET 5.0-6.0GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE(35% TYPICAL) 31.0dBm TYPICAL P1dB OUTPUT POWER 13dB TYPICAL G1dB POWER GAIN NON-HERMETIC 180 MIL METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 O C) EIA0506-1P180F SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=5.0-6.0GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=5.0-6.0GHz MIN 29.5 11 TYP 31.0 13 MAX UNIT dBm dB P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth Power Added Efficiency at 1dB compression f=5.06.0GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss rd 35 440 37 550 720 760 -1.0 -13 -15 16 o % mA dBm 850 mA mS -2.5 V V C/W f=5.0-6.0GHz Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=6mA Drain Breakdown Voltage Igd=4.8mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt www.DataSheet4U.com PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 90mA 29dBm 175oC -65/175 C 8.5W o CONTINUOUS2 8V -3V Idss 15mA @ 3dB Compression 150oC -65/150oC 7.1W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Excee...