EIA7785-2

EIA7785-2 UPDATED 11/16/2006 7.70-8.50GHz 2-Watt Internally Matched Power FET FEATURES 7.70– 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34 dBm Output Power at 1dB Compression 12.5 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. .650±.008 .512 EIA7785-2 GATE Excelics YYWW .060 MIN. DRAIN .319 .022 SN .094 .382 .004 .129 .070 ±.008 .045 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 8V, IDSQ ≈ 800mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 8V, IDSQ ≈ 800mA Gain Flatness f = 7.70-8.50GHz VDS = 8V, IDSQ ≈ 800mA Power Added Efficiency at 1dB Compression VDS = 8V, IDSQ ≈ 800mA f = 7.70-8.50GHz Drain Current at 1dB Compression f = 7.70-8.50GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 1 Caution! ESD sensitive device. MIN 33.0 11.5 TYP 34.0 12.5 ±0.6 33 900 1400 -1.0 10 1100 1800 -2.5 11 o MAX UNITS dBm dB dB % mA mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 14 mA Note: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 VDS VGS Igsf Igsr Pin Tch Tstg www.DataSheet4U.com Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature St...