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DA2J108

Panasonic Semiconductor

Diode

This product complies with the RoHS Directive (EU 2002/95/EC). DA2J108 Silicon epitaxial planar type For small current ...


Panasonic Semiconductor

DA2J108

File Download Download DA2J108 Datasheet


Description
This product complies with the RoHS Directive (EU 2002/95/EC). DA2J108 Silicon epitaxial planar type For small current recitification  Features  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Package  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbol: A2 Unit V V mA mA A °C °C  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Output current (Average) Repetitive peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Note) *: 1 t = 1 s Symbol VR VRM IO(AV) IFRM IFSM Tj Tstg Rating 300 300 200 600 1 150 –55 to +150  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage (DC) Reverse current (DC) Terminal capacitance Symbol VF IR1 IR2 Ct IF = 200 mA VR = 200 V VR = 300 V VR = 0 V, f = 1 MHz 3.5 Conditions Min Typ Max 1.2 200 1 Unit V nA µA pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 3 MHz www.DataSheet4U.com Publication date: June 2010 ZKF00171AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DA2J108 DA2J108_ IF-VF IF  VF DA2J108_ IR-VR DA2J108_Ct-VR IR  VF Ct  VR 4.0 Ta = 25°C 104 103 10−2 Ta = 150°C 10−4 100°C 85°C 25°C 125°C Ter...




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