Diode
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J108
Silicon epitaxial planar type
For small current ...
Description
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J108
Silicon epitaxial planar type
For small current recitification Features
Small reverse current IR Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package
Package
Code SMini2-F5-B Pin Name 1: Cathode 2: Anode
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: A2
Unit V V mA mA A °C °C
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Maximum peak reverse voltage Output current (Average) Repetitive peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature
Note) *: 1 t = 1 s
Symbol VR VRM IO(AV) IFRM IFSM Tj Tstg
Rating 300 300 200 600 1 150 –55 to +150
Electrical Characteristics Ta = 25°C±3°C
Parameter Forward voltage (DC) Reverse current (DC) Terminal capacitance Symbol VF IR1 IR2 Ct IF = 200 mA VR = 200 V VR = 300 V VR = 0 V, f = 1 MHz 3.5 Conditions Min Typ Max 1.2 200 1 Unit V nA µA pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 3 MHz
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Publication date: June 2010
ZKF00171AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J108
DA2J108_ IF-VF
IF VF
DA2J108_ IR-VR
DA2J108_Ct-VR
IR VF
Ct VR
4.0 Ta = 25°C
104 103
10−2 Ta = 150°C 10−4 100°C 85°C 25°C 125°C
Ter...
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