DA2S001

DA2S001 Tentative DA2S001 Silicon epitaxial planar type For band switching Marking Symbol : D1 Package Code : SSMini2-F5-B Absolute Maximum Ratings　Ta = 25 °C Parameter Reverse voltage(DC) Forward current (DC) Junction temperature Operating ambient temperature Storage temperature Total pages page Symbol VR IF Tj Topr Tstg Rating 35 100 150 -25 to +85 -55 to +150 Unit V mA °C °C °C Pin name 1. Cathode 2. Anode *1 Note: 1. *1 Maximum ambient temperature during operation. Electrical Characteristics　Ta = 25 °C Parameter Forward voltage(DC) Reverse current(DC) Diode capacitance Forward dynamic resistance Symbol VF IR CD rf Conditions IF = 100 mA VR = 33 V VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Min Typ Max 1.0 100 1.2 0.85 Unit V nA pF Ω *1 Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz 3. *1 Measuring instrument:YHP MODEL 4191A RF IMPEDANCE ANALYZER www.DataSheet4U.com Packing Embossed type (Thermo-compression sealing) : 3 000 pcs / reel 2010.1.28 2010.7.29 Prepared Revised Semiconductor Company, Panasonic Corporation SSMini2-F5-B Unit: mm 0.80 −0.03 +0.05 0.13 −0.02 2 +0.05 0 to 0.05 1 0.20 ±0.05 (0.15) 0.30 ±0.05 5° www.DataSheet4U.com 0.60 −0.03 +0.05 5° 1.20 −0.03 1.60 ±0.05 +0.05 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any ...