Document
DCX (LO-R1) H
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
P/N
DCX122LH DCX142JH DCX122TH DCX142TH
R1 (NOM) 0.22K 0.47K 0.22K 0.47K
R2 (NOM)
10K 10K OPEN OPEN
MARKING
C81 C82 C83 C84
Mechanical Data
Case: SOT-563 Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.005 grams (Approximate)
SOT-563
R1 R2 R2 R1
R1 R1
R1, R2
R1 Only
SCHEMATIC DIAGRAM, TOP VIEW
Ordering Information (Note 4)
Notes:
Device DCX122LH-7 DCX142JH-7 DCX122TH-7 DCX142TH-7
Packaging SOT-563 SOT-563 SOT-563 SOT-563
Shipping 3,000/Tape & Reel 3,000/Tape & Reel 3,000/Tape & Reel 3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-563
CXXYM
CXX = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
Date Code Key Year Code
2002 N
Month
Jan
Code
1
2003 P
2004 R
2005 S
2006 T
2007 U
2008 V
2009 W
2010 X
2011 Y
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
2
3
4
5
6
7
8
9
O
N
2012 Z
Dec D
DCX (LO-R1) H
Document number: DS30429 Rev. 4 - 2
1 of 6 www.diodes.com
April 2015
© Diodes Incorporated
DCX (LO-R1) H
Maximum Ratings NPN Section (@TA = +25°C unless otherwise specified.)
Supply Voltage Input Voltage Input Voltage
Output Current
Characteristic
DCX122LH DCX142JH
DCX122TH DCX142TH
All
Symbol VCC VIN
VEBO (MAX) IC
Power Dissipation
(Notes 5 & 6)
Pd
Thermal Resistance, Junction to Ambient Air Operating and Storage Temperature Range
(Note 5)
RJA Tj, TSTG
Value 50
-5 to +6 -5 to +6
5
100 150 833 -55 to +150
Maximum Ratings PNP Section (@TA = +25°C unless otherwise specified.)
Supply Voltage Input Voltage
Input Voltage
Characteristic
DCX122LH DCX142JH
DCX122TH DCX142TH
Symbol VCC VIN
VEBO (MAX)
Value -50
+5 to -6 +5 to -6
-5
Output Current
All
IC
-100
Power Dissipation
(Notes 5 & 6)
Pd
150
Thermal Resistance, Junction to Ambient Air
(Note 5)
RJA
833
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Notes:
5. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 6. NPN Section, PNP Section, or maximum combined.
Unit V V V mA
mW °C/W
°C
Unit V V V mA
mW °C/W
°C
DCX (LO-R1) H
Document number: DS30429 Rev. 4 - 2
2 of 6 www.diodes.com
April 2015
© Diodes Incorporated
DCX (LO-R1) H
Electrical Characteristics NPN Section, R1, R2 Types (@TA = +25°C unless otherwise specified.)
Input Voltage
Characteristic
Output Voltage Input Current Output Current DC Current Gain
DCX122LH DCX142JH DCX122LH DCX142JH
DCX122LH DCX142JH
DDCX122LH DDCX142JH
Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl
Min Typ Max Unit
Test Condition
0.3 0.3
V VCC = 5V, IO = 100A
2.0 2.0
V VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA
0.3V V IO/Il = 5mA/0.25mA
28 13
mA VI = 5V
0.5 A VCC = 50V, VI = 0V
56 56
VO = 5V, IO = 10mA
Gain-Bandwidth Product*
fT
200 MHz VCE = 10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section, R1-Only (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio
DCX122TH DCX142TH
DCX122TH DCX142TH
DCX122TH DCX142TH
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE
Min Typ Max Unit
Test Condition
50
V IC = 50µA
40
V IC = 1mA
5
V IE = 50µA IE = 50µA
0.5 µA VCB = 50V
0.5 0.5
µA VEB = 4V
0.3 V IC = 5mA, IB = 0.25mA
100 100
250 250
600 600
IC = 1mA, VCE = 5V
Gain-Bandwidth Product*
fT
200 MHz VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics PNP Section, R1, R2 Types (@TA = +25°C unless otherwise specified.)
Input Voltage
Characteristic
Output Voltage Input Current
DCX122LH DCX142JH D.