DE5S062D

This product complies with the RoHS Directive (EU 2002/95/EC). DE5S062D Silicon epitaxial planar type For surge absorption circuits DE3S062D in SSMini5 type package  Features  High electrostatic discharge ESD  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Package  Code SSMini5-F4-B  Pin Name 1: Cathode-1 2: Anode-1, 2, 3, 4 3: Cathode-2 4: Cathode-3 5: Cathode-4  Basic Part Number Dual DE3S062D (Common Anode)  Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  Marking Symbol: 41  Internal Connection 5 4  Absolute Maximum Ratings Ta = 25°C Parameter Total power dissipation Electrostatic discharge Junction temperature Storage temperature *1 *2 Symbol PT ESD Tj Tstg Rating 150 ±30 150 –55 to +150 Unit mW kV °C °C 1 2 3 Note) *1: PT = 150 mW achieved with a printed circuit board. *2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)  Common Electrical Characteristics Ta = 25°C±3°C Parameter Zener voltage *1, 2 Reverse current Terminal capacitance Temperature coefficient of zener voltage *3 Symbol VZ IR Ct SZ IR = 1 mA VR = 4 V VR = 0 V, f = 1 MHz IZ = 1 mA 55 2.3 Conditions Min 5.89 Typ Max 6.51 1 Unit V µA pF mV/°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must b...