DMN3730UFB4

DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 460mΩ @ VGS= 4.5V 30V 560mΩ @ VGS= 2.5V ID TA = 25°C 0.9A 0.7A Features and Benefits 0.4mm ultra low profile package for thin application 2 0.6mm package footprint, 10 times smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Load switch Portable applications Power Management Functions Mechanical Data Case: DFN1006H4-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) Drain DFN1006H4-3 Body Diode Gate S D G ESD PROTECTED TO 2kV Gate Protection Diode Source Bottom View Top View Equivalent Circuit Ordering Information (Note 3) Part Number DMN3730UFB4-7 DMN3730UFB4-7B Notes: Marking NF NF Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3000 10,000 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be ...