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CHM4269JPT Dataheets PDF



Part Number CHM4269JPT
Manufacturers Chenmko Enterprise
Logo Chenmko Enterprise
Description Dual Enhancement Mode Field Effect Transistor
Datasheet CHM4269JPT DatasheetCHM4269JPT Datasheet (PDF)

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 40 Volts P-channel: VOLTAGE 40 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM4269JPT CURRENT 6.1 Ampere CURRENT 5.2 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8.

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 40 Volts P-channel: VOLTAGE 40 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM4269JPT CURRENT 6.1 Ampere CURRENT 5.2 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8 CONSTRUCTION * N-Channel & P-Channel Enhancement in the package 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT 8 D1 D1 D2 D2 5 1 4 S1 G1 S2 G2 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted N-Channel P-Channel Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 40 -40 V V ±20 6.1 (Note 3) ±20 -5.2 ID - Pulsed PD TJ TSTG A 20 2000 -55 to 150 -55 to 150 -20 mW °C °C Maximum Power Dissipation at Ta=25°C Operating Temperature Range Storage Temperature Range Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics www.DataSheet4U.com RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 °C/W 2007-06 ELECTRICAL CHARACTERISTIC ( CHM4269JPT ) N-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 µA VDS = 40 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 40 1 +100 -100 V µA nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA VGS=10V, ID=6A VGS=4.5V, ID=5A 1 3 32 46 3 V mΩ S Forward Transconductance VDS =5V, ID = 6A Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 20V, VGS = 0V, f = 1.0 MHz 1050 155 95 pF SWITCHING CHARACTERISTICS (Note 4) Qg Q gs Q gd t on tr t off tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=20V, ID=6A VGS=10V V DD= 20V I D = 6A , VGS = 10 V RGEN= 3 Ω 20.5 3.5 4.0 14 10 17 18 27 nC 30 20 35 35 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS V SD Drain-Source Diode Forward Current (Note 1) 1.0 1.0 A V Drain-Source Diode Forward Voltage I S = 1.0A , VGS = 0 V (Note 2) www.DataSheet4U.com ELECTRICAL CHARACTERISTIC ( CHM4269JPT ) P-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless.


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