Document
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor
N-channel: VOLTAGE 40 Volts P-channel: VOLTAGE 40 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
CHM4269JPT
CURRENT 6.1 Ampere CURRENT 5.2 Ampere
FEATURE
* Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability.
1
SO-8
4.06 (0.160) 3.70 (0.146)
8
CONSTRUCTION
* N-Channel & P-Channel Enhancement in the package
5.00 (0.197) 4.69 (0.185)
4 5
.51 (0.020) .10 (0.012) 1.27 (0.05)BSC
1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002)
.25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228)
CIRCUIT
8
D1 D1 D2 D2 5
1 4 S1 G1 S2 G2
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
N-Channel
P-Channel
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous
40
-40
V V
±20
6.1
(Note 3)
±20
-5.2
ID - Pulsed PD TJ TSTG
A 20 2000 -55 to 150 -55 to 150 -20 mW °C °C
Maximum Power Dissipation at Ta=25°C Operating Temperature Range Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting
Thermal characteristics
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RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 °C/W
2007-06
ELECTRICAL CHARACTERISTIC ( CHM4269JPT )
N-Channel Electrical Characteristics T
Symbol Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = 250 µA VDS = 40 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
40 1 +100 -100
V µA nA nA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 µA VGS=10V, ID=6A VGS=4.5V, ID=5A
1
3 32 46 3
V mΩ S
Forward Transconductance
VDS =5V, ID = 6A
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 20V, VGS = 0V, f = 1.0 MHz 1050 155 95 pF
SWITCHING CHARACTERISTICS (Note 4)
Qg Q gs Q gd t on tr t off tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=20V, ID=6A VGS=10V V DD= 20V I D = 6A , VGS = 10 V RGEN= 3 Ω
20.5 3.5 4.0 14 10 17 18
27 nC
30 20 35 35 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS V SD
Drain-Source Diode Forward Current
(Note 1)
1.0 1.0
A V
Drain-Source Diode Forward Voltage I S = 1.0A , VGS = 0 V (Note 2)
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ELECTRICAL CHARACTERISTIC ( CHM4269JPT )
P-Channel Electrical Characteristics T
Symbol Parameter
A
= 25°C unless.