DMP2004VK

DMP2004VK DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Dual P-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage VGS(TH) <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 3) Mechanical Data Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) SOT-563 D2 G1 S1 S2 G2 D1 ESD protected TOP VIEW BOTTOM VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 ±8 -530 -1.8 Units V V mA A Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) VGS = -4.5V Pulsed Drain Current Thermal Characteristics @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 400 312.5 -65 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient, Note 1 Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Cu...