Document
DMP2240UDM
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• • Dual P-Channel MOSFET Low On-Resistance • 150 mΩ @ VGS = -4.5V • 200 mΩ @ VGS = -2.5V • 240 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• • • • • • • • Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.015 grams (approximate)
• • • • • • •
SOT-26
D1 S1 D2
D1
6
5 S1 4 D2
G1 1 S2 2 G2 3
G1
S2
G2
TOP VIEW
TOP VIEW Internal Schematic
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current
@TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 70°C ID IDM Value -20 ±12 -2.0 -1.5 -7 Units V V A A
Characteristic
Thermal Characteristics
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead.
Symbol PD RθJA TJ, TSTG
Value 600 208 -65 to +150
Units mW °C/W °C
www.DataSheet4U.com 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMP2240UDM
Document number: DS31197 Rev. 5 - 2
1 of 5 www.diodes.com
April 2010
© Diodes Incorporated
DMP2240UDM
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 4.
@TA = 25°C unless otherwise specified Symbol BVDSS TJ = 25°C TJ = 125°C IDSS IGSS VGS(th) RDS (ON) gFS VSD Ciss Coss Crss tD(on) tr tD(off) tf Min -20 ⎯ ⎯ -0.45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ 92 134 180 3.1 ⎯ 320 80 60 11.51 12.09 55.34 27.54 Max ⎯ -1.0 -5.0 ±100 -1.0 150 200 240 ⎯ -0.9 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Unit V μA nA V mΩ S V pF pF pF ns ns ns ns Test Condition VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.0A VGS = -2.5V, ID = -1.5A VGS = -1.8V, ID = -0.5A VDS = -10V, ID = -810mA VGS = 0V, IS = -0.5A VDS = -16V, VGS = 0V f = 1.0MHz
VDS = -10V, VGS = -4.5V RG = 6Ω, RL = 10Ω
Short duration pulse test used to minimize self-heating effect.
VGS = -3.0V VGS = -2.0V
VDS = -10V
VGS = -1.8V
VGS = -1.6V
VGS =.