Asymmetrical Bridge Super Junction MOSFET Power Module
APTC60DHM24T3G
Asymmetrical Bridge Super Junction MOSFET Power Module
13 14 Q1 CR3
VDSS = 600V RDSon = 24mΩ max @ Tj = ...
Description
APTC60DHM24T3G
Asymmetrical Bridge Super Junction MOSFET Power Module
13 14 Q1 CR3
VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C
Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives
18
Features
22 19 7
23 8 Q4 CR2
4
3
29 15
30
31
32 16
R1
- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
28 27 26 25 29 30
23 22
20 19 18 16 15
Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23…
Absolute maximum ratings
Symbol VDSS ID Parameter Drain - Source Breakdown Voltage Continuous Drain Current Tc = 25°C Tc = 80°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A V mΩ W A mJ
August, 2009 1-7 APTC60DHM24T3G – Rev 1
IDM Pulsed Drain current VGS Gate - Source Voltage RDSon Drain - Source ON Resistance www.DataSheet4U.com PD Maximum Power Dissipation IAR Avalanche current (repetitive and non repetitive) EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
Tc =...
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