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APTC60HM45SCTG Dataheets PDF



Part Number APTC60HM45SCTG
Manufacturers Microsemi
Logo Microsemi
Description Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module
Datasheet APTC60HM45SCTG DatasheetAPTC60HM45SCTG Datasheet (PDF)

APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR3A VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 CR1B CR3B Q3 Features • G3 S3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Parallel SiC Schottky Diode - Ze.

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APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR3A VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 CR1B CR3B Q3 Features • G3 S3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration • • • • OUT2 G3 S3 G4 S4 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTC60HM45SCTG – Rev 2 Benefits • Outstanding performance at high frequency operation OUT1 VBUS 0/VBUS • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for S1 NTC2 S2 G1 NTC1 G2 easy PCB mounting • Low profile • RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 49 ID Continuous Drain Current A Tc = 80°C 38 IDM Pulsed Drain current 130 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 45 mΩ PD Maximum Power Dissipation Tc = 25°C 250 W www.DataSheet4U.com IAR Avalanche current (repetitive and non repetitive) 15 A EAR Repetitive Avalanche Energy 3 mJ EAS Single Pulse Avalanche Energy 1900 September, 2009 APTC60HM45SCTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 22.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 40 3 Max 25 250 45 3.9 100 Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 44A Inductive switching @ 125°C VGS = 10V VBus = 400V ID = 50A RG = 5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 50A ; RG = 5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 50A ; RG = 5Ω Min Typ 7.2 8.5 150 34 51 21 30 100 45 405 520 658 635 µJ ns nC Max Unit nF µJ Series diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V VR=200V Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 250 500 30 1.1 1.4 0.9 24 48 33 150 1.15 V September, 2009 2–8 APTC60HM45SCTG – Rev 2 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Reverse Recovery Time ns nC Qrr Reverse Recovery Charge www.DataSheet4U.com di/dt = 200A/µs www.microsemi.com APTC60HM45SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C IF = 20A Tj = 175°C IF = 20A, VR = 300V di/dt =800A/µs f = 1MHz, VR = 200V VR=600V f = 1MHz, VR = 400V Min 600 Typ 100 200 20 1.6 2.0 28 130 100 Max 400 2000 1.8 2.4 Unit V µA A V nC pF Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode 4000 -40 -40 -40 1.5 Min Typ Max 0.5 1.2 1.5 150 125 100 4.7 160 Unit °C/W Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V °C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜ ⎜T − T ⎟ ⎟⎥ ⎝ 25 ⎠⎦ ⎣ Min Typ 50 5 3952 4 Max Unit kΩ % K % www.DataSheet4U.com www.microsemi.com 3–8 APTC60HM45SCTG – Rev 2 September, 2009 APTC60HM45SCTG SP4.


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