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KV1921A Dataheets PDF



Part Number KV1921A
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES
Datasheet KV1921A DatasheetKV1921A Datasheet (PDF)

TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION The KV 1900 series of super hyperabrupt varactor diodes combines low voltage with high ratio tuning. They feature grown junction mesa technology for the highest Q commercially available. Passivation is our dense mil spec silicon dioxide for the lowest 1/F noise and low leakage even at temperature extremes. They are available in a wide range of package styles including chip (style 00) and most other conventional ceramic mic.

  KV1921A   KV1921A


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TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION The KV 1900 series of super hyperabrupt varactor diodes combines low voltage with high ratio tuning. They feature grown junction mesa technology for the highest Q commercially available. Passivation is our dense mil spec silicon dioxide for the lowest 1/F noise and low leakage even at temperature extremes. They are available in a wide range of package styles including chip (style 00) and most other conventional ceramic microwave packages. When ordering, specify the desired case style by adding its number as a suffix to the basic model number. For more details on surface mount Super Hyperabrupt Varactors see the Surface Mount Devices section. APPLICATIONS Low voltage / battery powered equipment from UHF through Ku band including: • Wide bandwidth VCO’s • Voltage Tunable Filters • Phase Shifters • Modulators • VCXO’s RATINGS: Minimum Voltage Breakdown: 12 V @ 10 µA Maximum Leakage Current: Junction Operating Temp.: Storage Temp.: 50 nA @ 10 V / 25°C -55°C to +125°C -65°C to +200°C ELECTRICAL SPECIFICATIONS: TA=25°C MODEL KV1911A KV1951A KV1921A KV1931A KV1941A KV1961A KV1971A KV1981A KV1991A CJ @ 1 V (pF) >36.00 >26.00 >17.00 >13.00 > 9.00 > 3.80 > 1.65 > 1.20 > 0.60 CJ @ 2.5 V (pF) 18 - 27 13 - 20 8.3 - 12.8 6.3 - 9.8 4.3 - 6.3 1.8 - 2.8 0.9 - 1.35 0.6 - 0.9 0.3 - 0.6 CJ @ 4 V (pF) <11.80 < 8.80 < 5.80 < 4.30 < 2.80 < 1.30 < 0.60 < 0.45 < 0.25 CJ @ 8 V (pF) <6.00 <4.50 <3.00 <2.50 <1.50 <0.80 <0.35 <0.30 <0.15 Q@4V/ 50 MHz 400 500 600 750 900 1200 1400 1600 1800 SEMICONDUCTOR OPERATION 75 T echnology Drive • Lowell, MA 01851 • T el: 978-442-5600 • Fax: 978-937-3748 39 .


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