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NSM21356DW6T1G

ON Semiconductor

Dual Complementary Transistors

NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Ne...


ON Semiconductor

NSM21356DW6T1G

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Description
NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to replace multiple transistors and resistors on customer boards by integrating these components into a single device. NSM21356DW6T1G is housed in a SC-88/SOT-363 package which is ideal for low power surface mount applications in space constrained applications. Features (3) http://onsemi.com (2) (1) Q1 Q2 R2 (4) R1 (5) (6) ăSimplifies Circuit Design ăReduces Board Space ăReduces Component Count ăQ1: NPN BRT, R1 = R2 = 47 k ăQ2: PNP ăThis is a Pb-Free Device Applications 6 1 SC-88/SOT-363 CASE 419B STYLE 1 ăLogic Switching ăAmplification ăDriver Circuits ăInterface Circuits MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating - Q1 (NPN BRT) Collector‐Base Voltage Collector‐Emitter Voltage Collector Current Rating - Q2 (PNP) Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCBO VCEO IC Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value ā50 ā50 100 Value -ā80 -ā65 -ā5.0 -100 Unit Vdc Vdc mAdc Unit Vdc Vdc Vdc mAdc MARKING DIAGRAM 6 N2 M G G 1 N2 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary dependi...




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