NSRLL30XV2T1G

NSRLL30XV2T1G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features http://onsemi.com Extremely Fast Switching Speed Extremely Low Forward Voltage 0.6 V (max) @ IF = 200 mA Low Reverse Current ESD Rating: Class 3B per Human Body Model Class C per Machine Model This is a Pb−Free Device 30 VOLT SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Reverse Voltage Forward Current DC Symbol VR IF Value 30 200 Unit V mA 1 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SOD−523 CASE 502 PLASTIC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range 1. FR−5 Minimum Pad. Symbol PD Max 200 1.57 RqJA TJ, Tstg 635 −55 to +150 Unit mW mW/°C °C/W °C 1 RT M G G MARKING DIAGRAM 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Leakage (VR = 10 V) Forward Voltage (IF = 200 mA) Symbol IR VF Min −...