DatasheetsPDF.com

NSS40300DDR2G Dataheets PDF



Part Number NSS40300DDR2G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual 40 V 6.0 A / Low VCE(sat) PNP Transistor
Datasheet NSS40300DDR2G DatasheetNSS40300DDR2G Datasheet (PDF)

NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotiv.

  NSS40300DDR2G   NSS40300DDR2G


Document
NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 40 VOLTS 6.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 80 mW COLLECTOR 7,8 2 BASE 1 EMITTER 4 BASE 3 EMITTER COLLECTOR 5,6 • Halide Free • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max −40 −40 −7.0 −3.0 −6.0 Unit Vdc Vdc Vdc A A 8 1 SOIC−8 CASE 751 STYLE 16 HBM Class 3B MM Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DEVICE MARKING 8 40300 AYWWG G 1 40300 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION www.DataSheet4U.com Device NSS40300DDR2G Package SOIC−8 (Pb−Free) Shipping† 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 0 1 Publication Order Number: NSS40300D/D NSS40300DDR2G THERMAL CHARACTERISTICS Characteristic SINGLE HEATED Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) DUAL HEATED (Note 3) Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 10 mm2, 1 oz. copper traces, still air. 100 mm2, 1 oz. copper traces, still air. PD 653 5.2 RqJA PD 191 783 6.3 RqJA TJ, Tstg 160 −55 to +150 mW mW/°C °C/W mW mW/°C °C/W °C PD 576 4.6 RqJA PD 217 676 5.4 RqJA 185 mW mW/°C °C/W mW mW/°C °C/W Symbol Max Unit 1. FR− 4 @ 2. FR− 4 @ 3. Dual heated values assume total power is the sum of two equally powered devices. www.DataSheet4U.com http://onsemi.com 2 NSS40300DDR2G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = −40 Vdc, IE = 0) Emitter Cutoff Current (VEB = −6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) Collector − Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.200 A) Base − Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) Base − Emitter Turn−on Voltage (Note 4) (IC = −0.1 A, VCE = −2.0 V) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) Rise (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) Storage (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) Fall (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. td tr ts tf − − − − − − − − 60 120 400 130 ns ns ns ns hFE 250 220 180 150 − − − − − − 100 − − 380 340 300 230 −0.013 −0.075 −0.130 −0.135 −0.780 −0.660 − 250 50 − − − − V −0.017 −0.095 −0.170 −0.170 V −0.900 V −0.750 MHz − 300 65 pF pF V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Vdc −40 −40 −7.0 − − − − − − − − Vdc − Vdc − −0.1 −0.1 mAdc mAdc Symbol Min Typ Max Unit VCE(sat) VBE(sat) VBE(on) fT Cibo Cobo www.DataSheet4U.com http://onsemi.com 3 NSS40300DDR2G TYPICAL CHARACTERISTICS 0.25 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.20 0.15 25°C 0.10 150°C −55°C VCE(sat), COLLECTOR−EMITTE.


NSS20101J NSS40300DDR2G NSS40302PDR2G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)