AWT6301R

Cellular CDMA 3.4 V/28 dBm Linear Power Amplifier Module Data Sheet - Rev 2.0 AWT6301R FEATURES InGaP HBT Technology High Efficiency: 40%, VMODE = 0 V 41%, VMODE = +2.85 V (no mode switching) Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V Min Over Temp.) Optimized for a 50 Ω System Low Profile Surface Mount Package: 1.1mm CDMA 1XRTT, 1xEV-DO Compliant Pinout Enables Easy Phone Board Migration From 4 mm x 4 mm Package RoHS Compliant Package, 250 oC MSL-3 APPLICATIONS CDMA/EVDO Cell-band Wireless Handsets and Data Devices M9 Package 8 Pin 3 x 3 x 1 mm Surface Mount Module PRODUCT DESCRIPTION The AWT6301R meets the increasing demands for higher efficiency and linearity in CDMA1X handsets. The package pinout was chosen to enable handset manufacturers to switch from a 4mm x 4mm PA module with very few layout changes to the phone board. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-theart reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, serve to increase handset talk and standby time. The self contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 Ω system. GND at slug (pad) VREF 1 Bias Control 8 GND RFOUT www.DataSheet4U.com V...