PJ2306

PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES RDS(ON), VGS@10V,[email protected]=65mΩ RDS(ON), [email protected],[email protected]=85mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Load Switch, PWM Applications ESD Protected Component are in compliance with EU RoHS 2002/95/EC directives MECHANICALDATA Case: SOT-23 Package Terminals : Solderable per MIL-STD-750,Method 2026 Marking : 06 D 3 Top View 1 G 2 S Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D r a i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C ur re nt 1) S ym b o l V DS V GS ID ID M T A =2 5 O C T A =7 5 O C PD T J ,T S TG R θJ A L i mi t 30 +2 0 3 .2 16 1 .2 5 0 .7 5 -5 5 to + 1 5 0 100 Uni ts V V A A W O M a xi m um P o we r D i s s i p a ti o n Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e Junction-to Ambient Thermal Resistance(PCB mounted) 2 Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec C O C /W www.DataSheet4U.com PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE June 03, 2010-REV.00 PAGE . 1 PJ2306 ELECTRICALCHARACTERISTICS P a r a m e te r S ta t i c D r a i n- S o ur c e B r e a k d o wn Vo lt a g e G a t e Thr e s ho ld Vo lt a g e D r a i n- S ...