PJ4812

PJ4812 30V N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES RDS(ON), VGS@10V,IDS@8A=17mΩ RDS(ON), VGS@5.0V,IDS@6A=34mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters Fully Characterized Avalanche Voltage and Current Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA Case: SOIC-08 Package Terminals : Solderable per MIL-STD-750D,Method 1036.3 Marking : 4812 PIN Assignment 8 7 6 5 1 2 3 4 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5. Drain 2 6. Drain 2 7. Drain 1 8. Drain 1 ABSOLUTE MAXIMUM RATINGS (TC=25oC unless otherwise noted ) PARAMETER Drain-Source Voltage Gate-Source Voltage Continous Drain Current Pulsed Drain Current (1) Avalanche Energy L=0.1mH,I D=8A,VDD=25V Power Dissipation TC=25oC TC=75 C o SYMBOL VDS VGS TC=25oC ID I DM EAS PD TJ,TSTG RΘJA VALUE 30 +20 8 32 3.2 2.4 1.2 -55 to +175 62.5 UNIT V V A A mJ W Operating Junction and Stroage Temperature Range Junction-to-Ambient Thermal Resistance (PCB Mounted)2 www.DataSheet4U.com Note : 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec o C o C/W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE December 01.2009-REV.00 PAGE . 1 PJ4812 E L E C T R IC A L C H A R A C T E R IS TIC S ( T C = 2 5 o C , U n l e s s O t h e r w i s e N o t e d ) PA RA M E TE R S YM B O L T ...