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PJF13N50

Pan Jit International

500V N-Channel Enhancement Mode MOSFET

PJP13N50 / PJF13N50 500V N-Channel Enhancement Mode MOSFET FEATURES • 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A • • • •...


Pan Jit International

PJF13N50

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PJP13N50 / PJF13N50 500V N-Channel Enhancement Mode MOSFET FEATURES 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 D S MECHANICAL DATA Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP13N50 PJF13N50 MARKING P13N50 F13N50 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 1 3 N5 0 P J F 1 3 N5 0 Uni ts V V 500 +3 0 13 52 175 1 .4 13 52 52 0 .4 2 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 780 0 .7 6 2 .5 2 .4 100 O C Avalanche Energy with Single Pulse IAS=12.5A, VDD=50V, L=10mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance Note: 1. Maximum DC current limited by the package www.DataSheet4U.com O PAN JIT RE...




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