100V N-Channel Enhancement Mode MOSFET
PJP24N10 / PJF24N10
100V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance ...
Description
PJP24N10 / PJF24N10
100V N-Channel Enhancement Mode MOSFET
FEATURES
RDS(ON), VGS@10V,IDS@30A=24mΩ Low On Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification Component are in compliance with EU RoHS 2002/95/EC directives
1 2 G 3 D S 1 2 G 3 S D
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026
Drain
ORDERING INFORMATION
TYPE
PJP24N10 PJF24N10
MARKING
P24N10 F24N10
PACKAGE
TO-220AB ITO-220AB
PACKING
50PCS/TUBE 50PCS/TUBE
Gate Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r
T A =2 5 O C
S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA
P J P 2 4 N1 0
P J F 2 4 N1 0
Uni ts V V
100 +2 0 42 160 89 0 .7 1 42 160 32 0 .4 2
A A W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0 680 1 .4 6 2 .5 3 .8 100
O
C
Avalanche Energy with Single Pulse
IAS=17A, VDD=80V, L=4.7mΗ
mJ C /W C /W
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
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Note: 1. Maximum DC current l...
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