PJP24N10

PJP24N10 / PJF24N10 100V N-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@10V,IDS@30A=24mΩ Low On Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification Component are in compliance with EU RoHS 2002/95/EC directives 1 2 G 3 D S 1 2 G 3 S D TO-220AB / ITO-220AB TO-220AB ITO-220AB INTERNAL SCHEMATIC DIAGRAM MECHANICAL DATA Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE PJP24N10 PJF24N10 MARKING P24N10 F24N10 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 2 4 N1 0 P J F 2 4 N1 0 Uni ts V V 100 +2 0 42 160 89 0 .7 1 42 160 32 0 .4 2 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 680 1 .4 6 2 .5 3 .8 100 O C Avalanche Energy with Single Pulse IAS=17A, VDD=80V, L=4.7mΗ mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance www.DataSheet4U.com Note: 1. Maximum DC current l...