PJP2N60

PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP2N60 PJF2N60 MARKING P2N60 F2N60 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 2 N6 0 600 +3 0 2 8 45 0 .3 6 P J F 2 N6 0 Uni ts V V 2 8 20 0 .1 6 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 120 2 .7 8 6 2 .5 6 .2 5 100 O C Avalanche Energy with Single Pulse IAS=2.0A, VDD=50V, L=56mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance O Note : 1. Maximum DC current limited by the package www.DataSheet4U.com PAN JIT RESERVES THE RI...