700V N-Channel Enhancement Mode MOSFET
PJF2N70 / PJU2N70
700V N-Channel Enhancement Mode MOSFET
FEATURES
• 700V, RDS(ON)=5.5Ω@VGS=10V, ID=2A • Low ON Resistanc...
Description
PJF2N70 / PJU2N70
700V N-Channel Enhancement Mode MOSFET
FEATURES
700V, RDS(ON)=5.5Ω@VGS=10V, ID=2A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives
ITO-220AB/TO-251 ITO-220AB
TO -251
2 1 DS G
G 2 D 3 S
MECHANICAL DATA
Case: TO-220AB / TO-251 Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJF2N70 PJU2N70
MARKING
F2N70 U2N70
PACKAGE
ITO-220AB TO-251
PACKING
50PCS/TUBE 80PCS/TUBE
Gate Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n D e r a t i ng F a c t o r
T A = 2 5 OC
S ym b o l V DS V GS ID ID M PD T J , T S TG E AS R θJC R θJA
P J F 2 N7 0 700 +30 2 8 20 0 .1 6
P J U2 N7 0
U ni t s V V
2 8 31 0 .2 5
A A W
O
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
-5 5 to +1 5 0 140 6 .2 5 6 2 .5 4 100
O
C
Avalanche Energy with Single Pulse
IAS=2A, VDD=50V, L=45mΗ
mJ C /W C /W
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
O
www.DataSheet4U.com Note : 1. Maximum DC current limited by the package
PAN JIT RES...
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