600V N-Channel Enhancement Mode MOSFET
PJP7N60 / PJF7N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 7A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=3.5A • • • • • •...
Description
PJP7N60 / PJF7N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
7A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=3.5A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
3S 2 1 D G
3S 12D G
MECHANICAL DATA
Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM 2 Drain
ORDERING INFORMATION
1
TYPE
PJP7N60 PJF7N60
MARKING
P7N60 F7N60
PACKAGE
TO-220AB ITO-220AB
PACKING
50PCS/TUBE 50PCS/TUBE
Gate 3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a o to r
T A =2 5 O C
S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA
P J P 7 N6 0 600 +3 0 7 28 125 1 .0
P J F 7 N6 0
Uni ts V V
7 28 45 0 .3 6
A A W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0 530 1 6 2 .5 2 .7 8 100
O
C
Avalanche Energy with Single Pulse
IAS=7.0A, VDD=50V, L=19.5mH
mJ C /W C /W
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
O
Note : 1. Maximum DC current limited by the package www.DataSheet4U.com
PAN JIT RESERVES THE RIGHT...
Similar Datasheet