PJSD03TS

PJSD03TS~PJSD36TS SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES 120 Watts peak pules power( tp=8/20μs) Small package for use in portable electronics Suitable replacement for MLV’S in ESD protection applications Low clamping voltage and leakage current In compliance with EU RoHS 2002/95/EC directives 3~36 Volts POWER 120 Watts APPLICATIONS Case: SOD-523 plastic Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.0014 grams Marking : PJSD03TS : KD PJSD05TS : KE PJSD07TS : KF PJSD08TS : KR PJSD12TS : LE PJSD15TS : LM PJSD24TS : LZ PJSD36TS : MP 1 2 Cathode Anode MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power Dissipation (tp=8/20 μs) ESD Voltage Operating Temperature Storage Temperature Symbol PPP V ESD TJ TSTG Value 120 25 -50 to +150 -50 to +150 Units W KV O C C O ELECTRICALCHATACTERISTICS PJSD03TS Parameter Reverse Stand-Off Voltage Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA V R=3.3V I PP=5A 0Vdc Bias=f=1MHz 3.3Vdc Bias=f=1MHz Min. 4 Typical Max. 3.3 200 6.5 200 100 Units V V μA V pF pF www.DataSheet4U.com Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Off State Junction Capacitance July 20.2010-REV.00 PAGE . 1 PJSD03TS~PJSD36TS PJSD05TS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20μs) Off State Junction Capacitance Off Stat...