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PJSD05CFN2 Dataheets PDF



Part Number PJSD05CFN2
Manufacturers Pan Jit International
Logo Pan Jit International
Description BI-DIRECTIONAL TVS
Datasheet PJSD05CFN2 DatasheetPJSD05CFN2 Datasheet (PDF)

PJSD05CFN2 BI-DIRECTIONAL TVS This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium. SPECIFICATION FEA TURES • 200W Power Dissipation (8/20s Waveform) • Low Leakage Current, Maximum of 1 A@5Vdc • Very low Clamping voltage • IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance • In compliance.

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PJSD05CFN2 BI-DIRECTIONAL TVS This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium. SPECIFICATION FEA TURES • 200W Power Dissipation (8/20s Waveform) • Low Leakage Current, Maximum of 1 A@5Vdc • Very low Clamping voltage • IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance • In compliance with EU RoHS 2002/95/EC directives • Terminals : Solderable per MIL-STD-750, Method 2026 • Case : DFN 2L, Plastic • Marking : BT 2 7 5 4 DFN 2L Unit : inch(mm) APPLICATIONS • Video I/O ports protection • Set Top Boxes • Portable Instrumentation 2 47 5 4 3 2 0.008(0.22) MAX. PIN NO.1 IDENTIFICATION MAXIMUM RA TINGS Rating Peak Pulse Power (8/20 s Waveform) Maximum Peak Pulse Current (8/20 s Waveform) ESD Voltage (HBM) Op e ra ti ng J unc ti o n a nd S to r a g e Te m p e r a ture R a ng e Symbol Value 200 18 >25 -55 to +150 Units W A kV O PPP I PPM VESD T J ,T S TG C ELECTRICAL CHARACTERISTICS (T A=25oC) Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Symbol VWRM VBR IR VC VC CJ CJ I BR =1mA VR=5V I PP =5A I PP =15A 0 Vdc Bias f=1MHz 5 Vdc Bias f=1MHz Conditions Min. 6 Typ. Max. 5.0 1.0 11 14 70 60 Units V V A V V pF pF www.DataSheet4U.com Clamping Voltage (8/20s) Clamping Voltage (8/20s) Off State Junction Capacitance Off State Junction Capacitance PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.5-AUG.11.2009 PAGE . 1 PJSD05CFN2 TYPICAL CHARACTERISTICS 12 100 90 11 Per cen t of I pp 80 70 60 50 40 30 20 10 50% of I pp@20 m s vc,v 10 9 Rise time 10-90%-8 m s 8 2 4 6 8 10 12 14 16 18 0 0 5 10 15 20 25 30 Ipk,A time, m s Clamping Voltage vs I pp 8/20 m s Surge 75 70 65 60 55 50 0 1 2 3 4 Pulse Waveform Capacitance,pF 5 Bias Voltage,Vdc Capacitance vs. Biasing Voltage@1MHz www.DataSheet4U.com REV.0.5-AUG.11.2009 PAGE . 2 PJSD05CFN2 MOUNTING PAD LAYOUT DFN 2L 0.043 (1.10) 0.017 (0.42) 0.010 (0.26) 0.028 (0.70) 0.027 (0.68) ORDER INFORMATION • Packing information T/R - 8K per 7" plastic Reel Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit www.DataSheet4U.com does not convey any license under its patent rights or rights of others. REV.0.5-AUG.11.2009 PAGE . 3 .


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