BI-DIRECTIONAL ESD PROTECTION DIODE
PJSD05LCFN2
BI-DIRECTIONAL ESD PROTECTION DIODE
This bi-directional TVS has been designed to protect sensitive equipment...
Description
PJSD05LCFN2
BI-DIRECTIONAL ESD PROTECTION DIODE
This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium.
SPECIFICATION FEA TURES
40W Power Dippsipation (8/20s Waveform) Low Leakage Current, Maximum of 1 A@5Vdc Very low Clamping voltage IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance In compliance with EU RoHS 2002/95/EC directivess Terminals : Solderable per MIL-STD-750, Method 2026 Marking : BY
2 7 5 4
DFN 2L
Unit : inch(mm)
Case : DFN 2L, Plastic
MAX.
APPLICATIONS
Video I/O ports protection Set Top Boxes Portable Instrumentation
3 2 0.008(0.22)
PIN NO.1 IDENTIFICATION
MAXIMUM RA TINGS
Rating Peak Pulse Power (8/20 s Waveform) Peak Pulse Current (8/20 s Waveform) ESD Voltage (HBM) Op e ra t i ng J unc t i o n a nd S to r a g e Te mp e r a tur e Ra ng e
Symbol
Value 40 4 >25 -55 to +150
2 47
5 4
Units W A kV
O
PPP I PPM VESD
T J ,T S TG
C
ELECTRICAL CHARACTERISTICS (T A=25oC)
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage
Symbol VWRM V BR IR VC CJ
Conditions
Min. -
Typ. -
Max. 5.0 7.82 1.0 10 15
Units V V A V pF
I BR =1mA VR=5V I PP =4A 0 Vdc Bias f=1MHz
5.78 -
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Reverse Leakage Current Clamping Voltage (8/20s) Off State Junction Capacitance
PAN JIT RESERVES THE RIGHT TO IMPROVE PROD...
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