256Mbit (16Mx16bit) Mobile SDR Memory
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Specification of 256M (16Mx16bit) Mobile SDRAM
Memory Cell Array
...
Description
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Specification of 256M (16Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Apr. 2006 1
256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6GLF(P)-xE Series
11
Document Title
4Bank x 4M x 16bits Synchronous DRAM
Revision History
Revision No. 0.1 Initial Draft 1. Changed 166MHz IDD1 : 60mA --> 75mA 133MHz IDD1 : 55mA --> 65mA 105MHz IDD1 : 50mA --> 55mA 2. Remove CL2 operation (Page 13 to 14) 1. Release History Draft Date Feb. 2006 Remark Preliminary
0.2
Mar. 2006
Preliminary
1.0
Apr. 2006
Final
Rev 1.0 / Apr. 2006
2
256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6GLF(P)-xE Series
11
DESCRIPTION
The Hynix HY5S5B6GLF(P) is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs. The Hynix 256M Mobile SDRAM is 268,435,456-bit CMOS Mobile Synchronous DRAM(Mobile SDR), ideally suited for the main memory applications which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304x16. Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input ...
Similar Datasheet