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SBW13009-S
High Voltage Fast-Switching NPN Power Transistor
Features
� � � Very High Switching Spe...
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SBW13009-S
High Voltage Fast-Switching
NPN Power
Transistor
Features
� � � Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA
General Description
This Device is designed for high voltage,High speed switching characteristics required such as system,switching mode power supply. lighting
Absolute Maximum Ratings
Symbol
VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG
Parameter
Collector-Emitter Voltage Collector -emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature
Test Conditions
VBE =0 IB=0 IC=0
Value
700 400 9.0 12 25 6.0
Units
V V V A A A A W ℃ ℃
tP=5ms
12 120 -40~150 -40~150
Thermal Characteristics
Symbol
RӨJC RӨJA
Parameter
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
Value
1.04 62.5
Units
℃/W ℃/W
Rev.A Aug.2010
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SBW13009-S
Electrical Characteristics(Tc=25℃
Symbol
VCEO(sus) unless otherwise noted)
Parameter
Collector -Emitter Breakdown Voltage
Test Conditions
Ic=10mA,Ib=0 Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A
Value Min
400
Typ
-
Max
1.0
Units
V
-
-
1.5 3.0
V
VCE(sat)
Collector -Emitter Saturation Voltage
Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Tc=100℃ Ic=5.0A,Ib=1.0A -
2.0 1.2 1.6 1.5 10 40 30 10 0.8
V
VBE(sat)
Base-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Tc=100℃ 10 6 4 4 V uA...