HIT1213

HIT1213 Silicon NPN Epitaxial REJ03G1609-0100 Rev.1.00 Nov 28, 2007 Features Low frequency power amplifier Complementary pair with HIT673 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: PW ≤ 10 ms, Duty cycle ≤ 20% Symbol VCBO VCEO VEBO IC IC (peak) Note PC Tj Tstg Ratings 50 50 5 0.5 1.0 0.4 150 –55 to +150 Unit V V V A A W °C °C www.DataSheet4U.com REJ03G1609-0100 Rev.1.00 Nov 28, 2007 Page 1 of 4 HIT1213 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 VCE(sat) VBE(on) Min. 50 50 5 — — 60 — Typ — — — — — — — Max. — — — 500 500 320 0.6 1.2 Unit V V V nA nA — V Test Conditions IC = 10 µA, IE = 0 IC = 0.1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 50 V, IE = 0 VEB = 5 V VCE = 3 V, IC = 10 mA IC = 150 mA, IB = 15 mA VCE = 3 V, IC = 10 mA — — V www.DataSheet4U.com REJ03G1609-0100 Rev.1.00 Nov 28, 2007 Page 2 of 4 HIT1213 Main Characteristics Maximum Collector Dissipation Curve Collector Po...