PSTG50HST12

ECO-PACTM 1 Powerline N-Channel Trench GateIGBT Module PSTG 50HST12 VCES VCE(sat) IC25 IC75 ICM tSC I N H M Preliminary Data Sheet = 1200 V = 1.9 V = 72 A = 50 A = 150 A = 10 µs A B G Symbol VCES VGES IC25 IC75 ICM Ptot tSC TVJ Tstg RthJC RthJC VISOL MD dS dA Weight Test Conditions TVJ = 25°C to 150°C continous TC = 25°C; TC = 75°C; TC = 75°C; TC = 75°C VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V TVJ = 125°C, non-repetitive Maximum Ratings 1200 ±20 72 50 150 90 10 -40...+150 -40...+125 V V A A A W µs °C °C K/W K/W V~ Nm mm mm g Features Package with DCB ceramic base plate and soldering pins for PCB mounting Isolation voltage over 3000 V∼ Trench Gate Enhancement Mode N-Channel Device Non Punch through Structure High Switching Speed Low On-state Saturation Voltage High Input Impedance Simplifies Gate Drive Latch-Free Operation Fully Short Circuit Rated to 10 µs Wide RBSOA Applications High Frequency Inverters Motor Control Switch Mode Power Supplies High Frequency Welding UPS Systems PWM Drives IGBT-per devices Diode-per devices IISOL ≤ 1 mA, 50/60 Hz, t= 1 min. 180° sine Mounting torque (M4) typ. Creepage distance on surface Strike distance through air typ. 16 0.83 2.0 3000 1.5-1.8 min. 11.2 4.0 www.DataSheet4U.com Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005...