HTT1127E
Silicon NPN Epitaxial Twin Transistor
REJ03G0839-0100 (Previous ADE-208-1540)
Rev.1.00 Aug.10.2005
Features
• ...
HTT1127E
Silicon
NPN Epitaxial Twin
Transistor
REJ03G0839-0100 (Previous ADE-208-1540)
Rev.1.00 Aug.10.2005
Features
Include 2
transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1: Equivalent Buffer
transistor 2SC5700
Q2: Equivalent OSC
transistor 2SC5849
Outline
RENESAS Package code: PXSF0006LA-A (Package name: EMFPAK-6)
Pin Arrangement
6 54
B1 6 E2 5 B2 4
Q1
Q2
123
Note: Marking is “R”.
C1 1 E1 2 C2 3
1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1
Rev.1.00 Aug 10, 2005 page 1 of 8
HTT1127E
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
Note: *Value on PCB. (FR–4 (13 x 13 x 0.635 mm)).
Ratings
Q1
Q2
15
15
4
6
1.5
1.5
50
80
Total 200*
150
150
–55 to +150
–50 to +150
Collector Power Dissipation Pc* (mW)
Collector Power Dissipation Curve
250
*Value on PCB.
(FR–4 (13 x13 x 0.635 mm))
200
2 devices total
150
100
50
0
50
100
150
200
Ambient temperature Ta (°C)
(Ta = 25°C)
Unit
V V V mA mW °C °C
Rev.1.00 Aug 10, 2005 page 2 of 8
HTT1127E
Q1 Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage V(BR)CBO 15
Collector cutoff current
ICBO
⎯
Collector cutoff current
ICEO
⎯
Emitter cutoff current
...