Document
HTT1129E
Silicon NPN Epitaxial Twin Transistor
REJ03G0840-0200 (Previous ADE-208-1541A)
Rev.2.00 Aug.10.2005
Features
• Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1: Equivalent Buffer transistor 2SC5849
Q2: Equivalent OSC transistor 2SC5872
Outline
RENESAS Package code: PXSF0006LA-A (Package name: EMFPAK-6)
Pin Arrangement
6 54
B1 6 E2 5 B2 4
Q1
Q2
123
Note: Marking is “Z”.
C1 1 E1 2 C2 3
1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1
Rev.2.00 Aug 10, 2005 page 1 of 8
HTT1129E
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
Note: *Value on PCB. (FR–4 (13 x 13 x 0.635 mm)).
Ratings
Q1
Q2
15
15
6
6
1.5
0.8
80
50
Total 200*
150
150
–55 to +150
–50 to +150
(Ta = 25°C)
Unit
V V V mA mW °C °C
Collector Power Dissipation Pc* (mW)
Collector Power Dissipation Curve
250
*Value on PCB.
(FR–4 (13 x13 x 0.635 mm))
200
2 devices total
150
100
50
0
50
100
150
200
Ambient temperature Ta (°C)
Rev.2.00 Aug 10, 2005 page 2 of 8
HTT1129E
Q1 Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage V(BR)CBO 15
⎯
⎯
V IC = 10 µA, IE = 0
Collector cutoff current
ICBO
⎯
⎯
0.1
µA VCB = 15 V, IE = 0
Collector cutoff current
ICEO
⎯
⎯
0.1
µA VCE = 6 V, RBE = infinite
Emitter cutoff current
IEBO
⎯
⎯
0.1
µA VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
90
120 140
⎯ VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre
⎯
0.50 0.65
pF VCB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product Forward transfer coefficient Noise figure
fT |S21|2
NF
2
4
⎯
GHz VCE = 1 V, IC = 5 mA, f = 1 GHz
7
11
⎯
dB VCE = 1 V, IC = 5 mA,
⎯
1.7
2.3
dB f = 900 MHz,
ΓS = ΓL = 50 Ω
Q2 Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage V(BR)CBO 16
⎯
⎯
V IC = 10 µA, IE = 0
Collector cutoff current
ICBO
⎯
⎯
0.1
µA VCB = 15 V, IE = 0
Collector cutoff current
ICEO
⎯
⎯
0.1
µA VCE = 6 V, RBE = infinite
Emitter cutoff current
IEBO
⎯
⎯
0.1
µA VEB = 0.8 V, IC = 0
DC current transfer ratio
hFE
90
120 140
⎯ VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre
⎯
0.25 0.35
pF VCB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product Forward transfer coefficient Noise figure
fT |S21|2
NF
8
10
⎯
GHz VCE = 1 V, IC = 5 mA, f = 1 GHz
13
16
⎯
dB VCE = 1 V, IC = 5 mA,
⎯
1.0
1.6
dB f = 900 MHz
ΓS = ΓL = 50 Ω
Rev.2.00 Aug 10, 2005 page 3 of 8
HTT1129E
Q1 Main Characteristics
Collector Current IC (mA)
Typical Output Characteristics
20 180 µA
16
12
8
4
160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 40 µA
IB = 20 µA
0
1 2 3 4 56
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current
200 VCE = 1 V
100
DC Current Transfer Ratio hFE
Gain Bandwidth Product fT (GHz)
0
0.1
1.0
10
100
Collector Current IC (mA)
Gain Bandwidth Product vs. Collector Current
20 f = 1 GHz
16
VCE = 3 V 12
VCE = 2 V
8
4
0 12
VCE = 1 V
5 10 20
50 100
Collector Current IC (mA)
Noise Figure NF (dB)
Reverse Transfer Capacitance Cre (pF)
Collector Current IC (mA)
Typical Forward Transfer Characteristics 25
VCE = 1 V 20
15
10
5
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Reverse Transfer Capacitance vs. Collector to Base Voltage
1.0 Emitter ground f = 1 MHz
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
2.0
Collector to Base Voltage VCB (V)
Noise Figure vs. Collector Current
5 VCE = 1 V f = 900 MHz
4
3
2
1
0
1
2
5 10 20
50 100
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 4 of 8
HTT1129E
S21 Parameter |S21|2 (dB)
S21 Parameter vs. Collector Current
20 f = 1 GHz
16
VCE = 2 V
12
VCE = 1 V
8
4
0
1
2
5 10 20
50 100
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 5 of 8
HTT1129E
Q2 Main Characteristics
Collector Current IC (mA)
Typical Output Characteristics
20
160 µA
16
140 µA 120 µA
12
100 µA
80 µA
8
60 µA
40 µA 4
IB = 20 µA
0
1 2 3 4 56
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current
200 VCE = 1 V
100
DC Current Transfer Ratio hFE
Gain Bandwidth Product fT (GHz)
0
0.1
1.0
10
100
Collector Current IC (mA)
Gain Bandwidth Product vs. Collector Current
20
f = 1 GHz 16
12
VCE = 3 V
8
4
0 12
VCE = 1 V 5 10 20 50 100
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 6 of 8
Noise Figure NF (dB)
Reverse Transfer Capacitance Cre (pF)
Collector Current IC (mA)
Typical Forward Transfer Characteristics 50
VCE = 1 V 40
30
20
10
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Reverse Tr.