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HTT1129E Dataheets PDF



Part Number HTT1129E
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon NPN Epitaxial Twin Transistor
Datasheet HTT1129E DatasheetHTT1129E Datasheet (PDF)

HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 (Previous ADE-208-1541A) Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor 2SC5872 Outline RENESAS Package code: PXSF0006LA-A (Package name: EMFPAK-6) Pin Arrangement 6 54 B1 6 E2 5 B2 4 Q1 Q2 123 Note: Marking is “Z”. C1 1 E1 2 C2 3 1. Collector Q1 2. Emitter Q1 3. Collector Q2 4.

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HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 (Previous ADE-208-1541A) Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor 2SC5872 Outline RENESAS Package code: PXSF0006LA-A (Package name: EMFPAK-6) Pin Arrangement 6 54 B1 6 E2 5 B2 4 Q1 Q2 123 Note: Marking is “Z”. C1 1 E1 2 C2 3 1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1 Rev.2.00 Aug 10, 2005 page 1 of 8 HTT1129E Absolute Maximum Ratings Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Note: *Value on PCB. (FR–4 (13 x 13 x 0.635 mm)). Ratings Q1 Q2 15 15 6 6 1.5 0.8 80 50 Total 200* 150 150 –55 to +150 –50 to +150 (Ta = 25°C) Unit V V V mA mW °C °C Collector Power Dissipation Pc* (mW) Collector Power Dissipation Curve 250 *Value on PCB. (FR–4 (13 x13 x 0.635 mm)) 200 2 devices total 150 100 50 0 50 100 150 200 Ambient temperature Ta (°C) Rev.2.00 Aug 10, 2005 page 2 of 8 HTT1129E Q1 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 15 ⎯ ⎯ V IC = 10 µA, IE = 0 Collector cutoff current ICBO ⎯ ⎯ 0.1 µA VCB = 15 V, IE = 0 Collector cutoff current ICEO ⎯ ⎯ 0.1 µA VCE = 6 V, RBE = infinite Emitter cutoff current IEBO ⎯ ⎯ 0.1 µA VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 90 120 140 ⎯ VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre ⎯ 0.50 0.65 pF VCB = 1 V, f = 1 MHz Emitter ground Gain bandwidth product Forward transfer coefficient Noise figure fT |S21|2 NF 2 4 ⎯ GHz VCE = 1 V, IC = 5 mA, f = 1 GHz 7 11 ⎯ dB VCE = 1 V, IC = 5 mA, ⎯ 1.7 2.3 dB f = 900 MHz, ΓS = ΓL = 50 Ω Q2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 16 ⎯ ⎯ V IC = 10 µA, IE = 0 Collector cutoff current ICBO ⎯ ⎯ 0.1 µA VCB = 15 V, IE = 0 Collector cutoff current ICEO ⎯ ⎯ 0.1 µA VCE = 6 V, RBE = infinite Emitter cutoff current IEBO ⎯ ⎯ 0.1 µA VEB = 0.8 V, IC = 0 DC current transfer ratio hFE 90 120 140 ⎯ VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre ⎯ 0.25 0.35 pF VCB = 1 V, f = 1 MHz Emitter ground Gain bandwidth product Forward transfer coefficient Noise figure fT |S21|2 NF 8 10 ⎯ GHz VCE = 1 V, IC = 5 mA, f = 1 GHz 13 16 ⎯ dB VCE = 1 V, IC = 5 mA, ⎯ 1.0 1.6 dB f = 900 MHz ΓS = ΓL = 50 Ω Rev.2.00 Aug 10, 2005 page 3 of 8 HTT1129E Q1 Main Characteristics Collector Current IC (mA) Typical Output Characteristics 20 180 µA 16 12 8 4 160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 40 µA IB = 20 µA 0 1 2 3 4 56 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 200 VCE = 1 V 100 DC Current Transfer Ratio hFE Gain Bandwidth Product fT (GHz) 0 0.1 1.0 10 100 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current 20 f = 1 GHz 16 VCE = 3 V 12 VCE = 2 V 8 4 0 12 VCE = 1 V 5 10 20 50 100 Collector Current IC (mA) Noise Figure NF (dB) Reverse Transfer Capacitance Cre (pF) Collector Current IC (mA) Typical Forward Transfer Characteristics 25 VCE = 1 V 20 15 10 5 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) Reverse Transfer Capacitance vs. Collector to Base Voltage 1.0 Emitter ground f = 1 MHz 0.8 0.6 0.4 0.2 0 0.5 1.0 1.5 2.0 Collector to Base Voltage VCB (V) Noise Figure vs. Collector Current 5 VCE = 1 V f = 900 MHz 4 3 2 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 8 HTT1129E S21 Parameter |S21|2 (dB) S21 Parameter vs. Collector Current 20 f = 1 GHz 16 VCE = 2 V 12 VCE = 1 V 8 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 5 of 8 HTT1129E Q2 Main Characteristics Collector Current IC (mA) Typical Output Characteristics 20 160 µA 16 140 µA 120 µA 12 100 µA 80 µA 8 60 µA 40 µA 4 IB = 20 µA 0 1 2 3 4 56 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 200 VCE = 1 V 100 DC Current Transfer Ratio hFE Gain Bandwidth Product fT (GHz) 0 0.1 1.0 10 100 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current 20 f = 1 GHz 16 12 VCE = 3 V 8 4 0 12 VCE = 1 V 5 10 20 50 100 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 6 of 8 Noise Figure NF (dB) Reverse Transfer Capacitance Cre (pF) Collector Current IC (mA) Typical Forward Transfer Characteristics 50 VCE = 1 V 40 30 20 10 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) Reverse Tr.


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