ME9435A MOSFET Datasheet

ME9435A Datasheet, PDF, Equivalent


Part Number

ME9435A

Description

30V P-Channel Enhancement Mode MOSFET

Manufacture

Matsuki

Total Page 5 Pages
Datasheet
Download ME9435A Datasheet


ME9435A
30V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME9435A is the P-Channel logic enhancement mode power field
effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state
resistance.
These devices are particularly suited for low voltage application such
as cellular phone, notebook computer power management and other
battery powered circuits, and lower power loss that are needed in a
very small outline surface mount package.
ME9435A
FEATURES
1. -30V/-5.3A, RDS(ON)=40mΩ@VGS=-10V
2. -30V/-4.2A, RDS(ON)=60mΩ@VGS=-4.5V
PIN CONFIGURATION
(SOP-8)
Top View
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
Pulsed Drain Current 1)
Maximum Power Dissipation
TA=25
Operating Junction Temperature
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Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJC
RθJA
10 secs Steady State
-30
±20
-5.3
-20
2.5
-55 to 150
28
T10 sec
34
Steady State
62
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
/W
/W
Apr, 2007-Ver3.0
01

ME9435A
30V P-Channel Enhancement Mode MOSFET
ME9435A
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistance
GFS Forward Transconductance
DYNAMIC
Rg Gate resistance
Ciss Input capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VDS=0V, VGS=±20V
VDS=-24 VGS=0V
VGS=-10V, ID= -5.3A
VGS=-4.5V, ID= -4.2A
VDS=-15, ID=-5.3A
-30 V
-1.0 -2.2 -3.0
V
±100
-1
nA
μA
31 40
mΩ
40 60
5 11
S
VDS=0V, VGS=0V, f=1MHz
VDS=-15V, VGS=0V, f=1.0MHz
VDS=-15V, VGS=-5.3V,
ID=-10A
VDD=-15V, RL =15Ω
ID=-1A, VGEN=-10V
RG=6Ω
5.5
840 960
120 pF
35
21 25
6 nC
5.4
32 40
13 16
ns
58 75
69
www.DataSheet4U.com
Apr, 2007-Ver3.0
02


Features ME9435A 30V P-Channel Enhancement Mode M OSFET GENERAL DESCRIPTION The ME9435A i s the P-Channel logic enhancement mode power field effect transistors, using h igh cell density, DMOS trench technolog y. This high density process is especia lly tailored to minimize on-state resis tance. These devices are particularly s uited for low voltage application such as cellular phone, notebook computer po wer management and other battery powere d circuits, and lower power loss that a re needed in a very small outline surfa ce mount package. FEATURES 1. 2. -30V/ -5.3A, RDS(ON)=40mΩ@VGS=-10V -30V/-4.2 A, RDS(ON)=60mΩ@VGS=-4.5V PIN CONFIG URATION (SOP-8) Top View Absolute Maxi mum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage G ate-Source Voltage Continuous Drain Cur rent Pulsed Drain Current 1) Maximum Po wer Dissipation www.DataSheet4U.com Sy mbol VDSS VGSS TA=25℃ ID IDM TA=25℃ PD TJ RθJC RθJA 10 secs Steady Sta te -30 ±20 -5.3 -20 2.5 Unit V V A A W ℃ ℃/W Operating Junction Tempera.
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