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MBRI30100CT

Taiwan Semiconductor

30.0Amps Surface Mount Schottky Barrier Rectifier

MBRI30100CT 30.0Amps Surface Mount Schottky Barrier Rectifier I2PAK Pb RoHS COMPLIANCE Features — — — — — — — — — Plas...


Taiwan Semiconductor

MBRI30100CT

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Description
MBRI30100CT 30.0Amps Surface Mount Schottky Barrier Rectifier I2PAK Pb RoHS COMPLIANCE Features — — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High Surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guarding for over voltage protection High temperature soldering guaranteed: 260 ℃/ 10 seconds at terminals Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data — — — — — Case: JEDEC I2PAK molded plastic Terminals: Leads solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Weight: 1.41 grams Dimensions in inches and (millimeters) Marking Diagram MBRI30100CT = Specific Device Code G Y WW = Green compound = Year = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking voltage Maximum Average Forward Rectified Current @Tc = 130℃(Total Device) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage at IF = 15A, Ta=25℃ IF = 15A, Ta=125 ℃ ...




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