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TC2896 Dataheets PDF



Part Number TC2896
Manufacturers TRANSCOM
Logo TRANSCOM
Description 5 W Flange Ceramic Packaged GaAs Power FETs
Datasheet TC2896 DatasheetTC2896 Datasheet (PDF)

TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz • Suitable for High Reliability Application • Lg = 0.6 µm, Wg = 12 mm • Tight Vp ranges control • High RF input power handling capability • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2896 is packaged wit.

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TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz • Suitable for High Reliability Application • Lg = 0.6 µm, Wg = 12 mm • Tight Vp ranges control • High RF input power handling capability • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS Symbol P1dB GL IP3 PAE IDSS gm VP Rth CONDITIONS Output Power at 1dB Gain Compression Point, f = 6 GHz VDS = 8 V, IDS = 1200 mA Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 1200 mA Intercept Point of the 3rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 1200 mA, *PSCL = 23 dBm Power Added Efficiency at 1dB Compression Power, f = 6 GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 24 mA 18 MIN 36 TYP 36.5 8 47 40 3 2000 -1.7** 22 2.7 MAX UNIT dBm dB dBm % A mS Volts Volts °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO =6 mA Thermal Resistance * PSCL: Output Power of Single Carrier Level. ** For the tight control of the pinch-off voltage range, we divide TC2896 into 3 model numbers to fit customer design requirement (1)TC2896P1519 : Vp = -1.5V to -1.9V (2)TC2896P1620 : Vp = -1.6V to -2.0V (3)TC2896P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. www.DataSheet4U.com TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/4 TC2896 REV4_20070507 ABSOLUTE MAXIMUM RATINGS at 25 °C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 33 dBm 12 W 175 °C - 65 °C to +175 °C RECOMMANDED OPERATING CONDITION Symbol VDS ID Parameter Drain to Source Voltage Drain Current Rating 8V 1200 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. FLANGE PACKAGE OUTLINE (Unit: mm) Gate Source Source Drain TYPICAL COMMON SOURCE SCATTERING PARAMETERS (VD = 8 V, ID = 1200 mA) FREQUENCY (GHz) 2 3 4 5 6 7 8 9 S11 MAG 0.9650 0.9.


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