CES2324

N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.2A, RDS(ON) = 45mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. Rugged and reliable. SOT-23 package. CES2324 D D G SOT-23 G S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±12 4.2 16 1.25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.DataSheet4U.com Details are subject to change without notice . 7 - 26 Rev 1. 2006.May http://www.cetsemi.com CES2324 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.3A VD...