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CES2331 Dataheets PDF



Part Number CES2331
Manufacturers Chino-Excel Technology
Logo Chino-Excel Technology
Description P-Channel MOSFET
Datasheet CES2331 DatasheetCES2331 Datasheet (PDF)

P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.2A, RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. G S G SOT-23 CES2331 D D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg.

  CES2331   CES2331


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