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N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N7/CEU01N7
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 700
Units V V A A W W/ C C
±30
0.8 3.0 31 0.25 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 4 50 Units C/W C/W
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Details are subject to change without notice . 1
Rev 2. 2011.Jan http://www.cetsemi.com
CED01N7/CEU01N7
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
Notes : a.Drain current limited by maximum junction temperature. b.Repetitive Rating : Pulse width limited by maximum junction temperature. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 0.8A VDS = 480V,ID = 0.4A, VGS = 10V Test Condition VGS = 0V, ID = 250µA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.5A 2 16 Min 700 1 10 -10 4 18 Typ Max Units V
µA
uA uA V Ω
VDS = 25V, VGS = 0V, f = 1.0 MHz
135 45 20 19 13 24 35 6 1 4.4 0.8 1.5 38 26 48 70 7.8
pF pF pF ns ns ns ns nC nC nC A V
VDD = 300V, ID = 0.4A, VGS = 10V, RGEN = 4.7Ω
Drain-Source Diode Characteristics and Maximun Ratings
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2
CED01N7/CEU01N7
1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 VGS=10,8,7V 2.0 25 C 1.6 1.2 0.8 0.4 0.0
ID, Drain Current (A)
ID, Drain Current (A)
VGS=4V
TJ=125 C
-55 C 4 5 6 7
4
8
12
16
20
24
1
2
3
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
240 200 160 120 80 40 0 Ciss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=0.5A VGS=10V
Coss Crss 0 5 10 15 20 25
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Dr.