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CEU01N7 Dataheets PDF



Part Number CEU01N7
Manufacturers Chino-Excel Technology
Logo Chino-Excel Technology
Description N-Channel MOSFET
Datasheet CEU01N7 DatasheetCEU01N7 Datasheet (PDF)

N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N7/CEU01N7 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise note.

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N7/CEU01N7 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 700 Units V V A A W W/ C C ±30 0.8 3.0 31 0.25 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 4 50 Units C/W C/W www.DataSheet4U.com Details are subject to change without notice . 1 Rev 2. 2011.Jan http://www.cetsemi.com CED01N7/CEU01N7 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Notes : a.Drain current limited by maximum junction temperature. b.Repetitive Rating : Pulse width limited by maximum junction temperature. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 0.8A VDS = 480V,ID = 0.4A, VGS = 10V Test Condition VGS = 0V, ID = 250µA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.5A 2 16 Min 700 1 10 -10 4 18 Typ Max Units V µA uA uA V Ω VDS = 25V, VGS = 0V, f = 1.0 MHz 135 45 20 19 13 24 35 6 1 4.4 0.8 1.5 38 26 48 70 7.8 pF pF pF ns ns ns ns nC nC nC A V VDD = 300V, ID = 0.4A, VGS = 10V, RGEN = 4.7Ω Drain-Source Diode Characteristics and Maximun Ratings www.DataSheet4U.com 2 CED01N7/CEU01N7 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 VGS=10,8,7V 2.0 25 C 1.6 1.2 0.8 0.4 0.0 ID, Drain Current (A) ID, Drain Current (A) VGS=4V TJ=125 C -55 C 4 5 6 7 4 8 12 16 20 24 1 2 3 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 240 200 160 120 80 40 0 Ciss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=0.5A VGS=10V Coss Crss 0 5 10 15 20 25 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Dr.


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