N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G
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CED16N10L/CEU16N10L
PRELIMINARY
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D G S CEU SERIES TO-252(D-PAK)
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